G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ Drain-Source Voltage Gate-Source Vol.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-251 package is widely preferred for commercial-industrial through-hole appli.

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